Product name: 35*25 ceramic chip, gold-plated ceramic board, photoetched ceramic multilayer board, ion implanted ceramic integrated circuit

Wafer material: Si02, >99.99%
Packaging shell material: A1N, >98%
Thickness of lithography paste: 0.00035mm
Number of photolithography mask layers: 22 layers
Lithography type: UV
Built-in transistor specifications: 115nm
Built-in circuit process: etching + ion implantation
Ion implantation speed: 300000km/h
Total thickness: 4.0mm
Electrode: ceramic metallization + copper clad
Surface: Polished ceramic firing
Temperature: 1680℃
Ceramic thermal conductivity: 270W/k.m
Flatness: <0.035mms
Ceramic volume resistivity: >1013Q.Cm
Ceramic hardness: >1150HV5